Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2009-03-03
2011-12-27
Park, Kinam (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S050110, C372S045010, C372S050124, C372S046010
Reexamination Certificate
active
08085827
ABSTRACT:
A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.
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Japanese Office Action issued Sep. 30, 2010 for corresponding Japanese Application No. 2008-112212.
Arakida Takahiro
Jogan Naoki
Koda Rintaro
Masui Yuji
Oki Tomoyuki
Park Kinam
Rader & Fishman & Grauer, PLLC
Sony Corporation
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