Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-05-10
2005-05-10
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S035000, C438S039000, C438S456000
Reexamination Certificate
active
06890778
ABSTRACT:
An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n++layer of a p++
++tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces. The active region is defined by the current aperture which includes the mesa surrounded by the air gap, thereby allowing for restricting an electrical current flow to the active region, while the air gap provides for the lateral variation of the index of refraction in the VCSEL.
REFERENCES:
patent: 20020126725 (2002-09-01), Tayebati
patent: 20030020926 (2003-01-01), Miron
patent: 20030031221 (2003-02-01), Wang et al.
patent: 20030169786 (2003-09-01), Kapon et al.
Margalit et al, Laterally oxidized loneg wave length CW Vertical cavity lasers, Appl Phys Letts 69(4)Jull.221996 pp471-472.*
Ohiso et al, 1.55microns Vertical-cavity surface emitting Lasers with wafer-fused InGaAsP/InP-Gaas/AlAs DBRs Electronic letts, vol. 32, No 16, Aug, lst1996.*
S Rapp et al, Near Room-temperature Continuous-wave Operation of Electrically Pumped 1.55 microns Vertcal- CavityLasers with In GaAsP/InP bottom mirror, Electronic Letts, vol. 35, No. 1, Jan 7th1999.*
W Yuen et al, high-performance 1.6 microns Single—epitaxy Top-emitting VCSEL., Eleronic Letts vol. 36, No 13 Jun. 22 nd 2000.*
A.V Sirbu et al, “30 C CW Operation of 1.52 microns InGaAsP/AlGaAs Vertcal Cavity Lasers with In Situ Built-in-Lateral Current Confinement by Localised Fusion”, Electronic letts, vol. 34 No. 18, sep 3rd1998.
Iakovlev Vladimir
Kapon Elyahou
Rudra Alok
Sirbu Alexei
EPFL
Moetteli John
Moetteli & Associates
Mulpuri Savitri
LandOfFree
Vertical cavity surface emitting laser and a method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vertical cavity surface emitting laser and a method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical cavity surface emitting laser and a method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3449571