Vertical cavity surface emitting laser

Details Vertical cavity surface emitting laser Vertical cavity surface emitting laser

2009-05-08

2010-12-14

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050124

Reexamination Certificate

active

07852896

ABSTRACT:
A VCSEL includes a GaAs substrate; a first semiconductor distributed Bragg reflector (DBR) disposed on the GaAs substrate and including a first part and a second part on the first part; a semiconductor mesa disposed on the first semiconductor DBR and including an active layer; and a second DBR on the semiconductor mesa. The first part is composed of an undoped semiconductor material. The second part includes third III-V compound semiconductor layers composed of a material containing indium and gallium as the group III element and phosphorus as the group V element and fourth III-V compound semiconductor layers composed of a material containing gallium as the group III element and arsenic as the group V element. The third III-V compound semiconductor layers and the fourth III-V compound semiconductor layers are doped with an n-type impurity.

REFERENCES:
patent: 6927412 (2005-08-01), Takahashi et al.
patent: 7235816 (2007-06-01), Takahashi et al.
patent: 7435660 (2008-10-01), Johnson
patent: 7714338 (2010-05-01), Takahashi et al.
“High-efficiency, high-speed VCSELs with deep oxidation layers”, Chang et al., Electronic Letters, vol. 42, No. 22, (2006).

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