Vertical cavity surface emitting laser

Details Vertical cavity surface emitting laser Vertical cavity surface emitting laser

2008-12-29

2011-12-13

Van Roy, Tod T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S046013, C372S046012, C372S050100, C372S050124

Reexamination Certificate

active

08077752

ABSTRACT:
A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

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