Coherent light generators – Particular active media – Semiconductor
Patent
1989-12-04
1991-08-06
Epps, Georgia
Coherent light generators
Particular active media
Semiconductor
372 46, 372 48, 372 49, 357 4, 357 17, 437129, H01S 319
Patent
active
050383566
ABSTRACT:
A semiconductor diode laser device, and a related method for its fabrication, the laser being of the type from which light is emitted in a direction perpendicular to planar layers forming the device. The laser includes an active layer and cladding layers formed on a supporting substrate, and a highly reflective semiconductor stack reflector formed on one of the cladding layers. The semiconductor stack reflector may be placed in contact with a heat sink and performs the multiple functions of electrical current conduction, heat removal and light reflection. A current confinement layer is formed laterally surrounding the semiconductor stack reflector, to provide one element of a back-biased junction that confines the current to the reflector region. A dielectric stack reflector is formed in a well in the substrate, and provides for light emission from the device. Operation of the device at high powers and efficiencies, even in continous-wave (CW) mode, is made possible by positioning the active layer in close proximity to the heat sink, and by the effectiveness of the current confinement layer surrounding the semiconductor stack reflector.
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Botez Dan
Mawst Luke J.
Roth Thomas J.
Zinkiewicz Lawrence M.
Epps Georgia
Goldstein Sol L.
Heal Noel F.
TRW Inc.
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