Coherent light generators – Particular resonant cavity – Distributed feedback
Reexamination Certificate
2007-08-21
2007-08-21
Wilczewski, M. (Department: 2822)
Coherent light generators
Particular resonant cavity
Distributed feedback
C438S047000
Reexamination Certificate
active
11338220
ABSTRACT:
A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
REFERENCES:
patent: 5544193 (1996-08-01), Devaud-Pledran et al.
patent: 5903586 (1999-05-01), Ramdani et al.
patent: 6026108 (2000-02-01), Lim et al.
patent: 6061380 (2000-05-01), Jiang et al.
patent: 6072196 (2000-06-01), Sato
patent: 6207973 (2001-03-01), Sato et al.
patent: 6281518 (2001-08-01), Sato
patent: 6452215 (2002-09-01), Sato
patent: 6489175 (2002-12-01), Jiang et al.
patent: 6542528 (2003-04-01), Sato et al.
patent: 6556610 (2003-04-01), Jiang et al.
patent: 6563851 (2003-05-01), Jikutani et al.
patent: 6611544 (2003-08-01), Jiang et al.
patent: 6614821 (2003-09-01), Jikutani et al.
patent: 6657233 (2003-12-01), Sato et al.
patent: 6674785 (2004-01-01), Sato et al.
patent: 6756325 (2004-06-01), Bour et al.
patent: 6856631 (2005-02-01), Takahashi
patent: 6884291 (2005-04-01), Jikutani et al.
patent: 2002/0054618 (2002-05-01), Jiang et al.
patent: 2002/0074631 (2002-06-01), Sato et al.
patent: 2003/0006429 (2003-01-01), Takahashi et al.
patent: 2003/0157739 (2003-08-01), Jiang et al.
patent: 2003/0219917 (2003-11-01), Johnson et al.
patent: 2004/0065888 (2004-04-01), Sato et al.
patent: 2005/0040413 (2005-02-01), Takahashi et al.
patent: 2005/0106766 (2005-05-01), Kim et al.
patent: 2005/0142683 (2005-06-01), Johnson et al.
patent: 2005/0202614 (2005-09-01), Spruytte et al.
patent: 2006/0093010 (2006-05-01), Sekiya et al.
patent: 2006/0261352 (2006-11-01), Takahashi et al.
patent: 6-37355 (1994-02-01), None
patent: 7240506 (1995-09-01), None
patent: 7307525 (1995-11-01), None
patent: 8340146 (1996-12-01), None
patent: 10126004 (1998-05-01), None
patent: 10303515 (1998-11-01), None
patent: 11-4040 (1999-01-01), None
patent: 11145560 (1999-05-01), None
patent: 20004068 (2000-01-01), None
Masahiko Kondow et al., “GaInNas: A Novel Material for Wavelength-Range Laser Diodes With Excellent High-Temperature Performance”, Jpn. J. Appl. Phys, Part 1, No. 28, Feb. 1996, pp. 1273-1275.
M. Kawaguchi et al., “Low Threshold Current Density Operation of GaInNas Quantum Well Lasers Grown By Metalorganic Chemical Vapoour Deposition”, Electronics Letter, Oct. 12, 2000, vol. 36, No. 21, pp. 1776-1777.
Itoh Akihiro
Jikutani Naoto
Kaminishi Morimasa
Sato Shun'ichi
Takahashi Takashi
Cooper & Dunham LLP
Ricoh & Company, Ltd.
Wilczewski M.
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