Vertical cavity semiconductor laser with lattice-mismatched mirr

Details Vertical cavity semiconductor laser with lattice-mismatched mirr Vertical cavity semiconductor laser with lattice-mismatched mirr

1990-04-06

1991-04-30

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 99, H01S 319

Patent

active

050124862

ABSTRACT:
In a vertical semiconductor laser, the top mirror is composed of alternating layers of lattice-mismatched semiconductors. Quantum reflections and other charge transport barriers for majority carriers at the interface, and hence electrical resistance and power dissipation, are reduced by choosing the lattice-mismatched semiconductor materials in such a manner as to align their band edges for majority carriers. On the other hand, the semiconductor materials are selected to supply relatively large refractive index differences, and hence relatively large optical reflections, at their interfaces. The lattice-mismatching may also produce vertical thread dislocations through the stack, which increase the electrical conductivity.

REFERENCES:
patent: 4943970 (1990-07-01), Bradley
patent: 4949351 (1990-08-01), Imanaka

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