Vertical cavity semiconductor laser

Details Vertical cavity semiconductor laser Vertical cavity semiconductor laser

1995-06-06

1996-09-24

Kunemund, Robert

Fishing, trapping, and vermin destroying

148DIG95, H01L 2120

Patent

active

055590535

ABSTRACT:
This invention involves a vertical cavity surface emitting laser ("VCSEL") having a Group III-V semiconductor epitaxial mesa structure with an electrically insulating sidewall located on the mesa's sidewalls for confinement of the optical radiation generated in the laser. A suitably doped Group III-V epitaxial layer or a layer of insulating material such as silicon dioxide acts as the insulating sidewall layer. Advantageously, the structure has a self-aligned ohmic contact layer located everywhere on the top surface of the epitaxial mesa structure.

REFERENCES:
patent: 4999843 (1991-03-01), Luryi et al.
patent: 5034958 (1991-07-01), Kwon et al.
patent: 5208821 (1993-05-01), Berger et al.
patent: 5212702 (1993-05-01), Choquette
patent: 5258316 (1993-11-01), Ackley et al.
patent: 5317587 (1994-05-01), Ackley et al.
patent: 5348912 (1994-09-01), Choquette et al.
K. D. Choquette et al., "Vertical-Cavity Surface-Emitting Laser Diodes Fabricated by Vacuum Integrated Processing," IEEE Photonics Tech. Lett., vol. 4, No. 9, Sep. 1992, pp. 951-995.
K. D. Choquette et al., "Vertical-Cavity Surface-Emitting Laser Diodes Fabricated by in Situ Dry Etching and Molecular Beam Epitaxial Regrowth," IEEE Photonics Tech. Lett., vol. 5, No. 3, pp. 284-287, Mar. 1993. Comments: Reference AA, together with its problems, are discussed in the specification of the present invention (p. 1, line 26 over to p. 2, line 15).
M. Hong et al., "Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes," Mat. Res. Soc. Symp. Proc., vol. 300, pp. 189-196, Jun. 1993. Comments: Reference AB (especially at p. 189, last paragraph) furnishes background of the present invention, regarding the issue of mesa (cavity) lateral size, as is mentioned in the specification of the present invention (p. 1, lines 23-25). This reference AB also describes a laser mesa structure with an epitaxial III-V semiconductor sidewall layer; but in this reference AB, the top metallic electrode layer does not and cannot contact the entire top surface of the mesa structure as it does in the present invention as claimed (claim 1, lines 8-9).

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