Coherent light generators – Particular resonant cavity – Distributed feedback
Patent
1993-12-14
1996-08-06
Bovernick, Rodney B.
Coherent light generators
Particular resonant cavity
Distributed feedback
372 99, H01S 318
Patent
active
055441939
ABSTRACT:
A vertical emission laser structure comprising an active region between stacks of layers forming Bragg reflection mirrors respectively of the n-type and of the p-type, wherein: the stacks of layers are formed by different pairs of materials in the n-type mirror and in the p-type mirror; the pair of materials constituting the n-type mirror comprises materials having a conduction band gap that is narrow or even non-existent; and the pair of materials constituting the p-type mirror comprises materials having a valance band gap that is narrow, or even non-existent.
REFERENCES:
patent: 4140367 (1979-02-01), Makuch et al.
patent: 4699458 (1987-10-01), Ohtsuki et al.
patent: 4949350 (1990-08-01), Jewell et al.
patent: 5012486 (1991-04-01), Luryi et al.
patent: 5054879 (1991-10-01), Brown
patent: 5097523 (1992-03-01), Marie
patent: 5170407 (1992-12-01), Schubert et al.
patent: 5208820 (1993-05-01), Kurihara et al.
patent: 5363393 (1994-11-01), Vomi et al.
patent: 5386486 (1995-01-01), Fan et al.
patent: 5392307 (1995-02-01), Sugiyami et al.
Tiwari et al., "Empiricalfit to Band Discontinuities and Barrier Heights in III-V Alloy Systems", Applied Physics Letters, 60(5) Feb. 3, 1992 pp. 630-635.
Peters et al., "Bandgap Engineered Digital Alloy Interaces. . ." Appl. Phys. Lett. 63(25) Dec. 20, 1993 pp. 3411-3413.
IEEE Photonics Technology Letters vol. 2, No. 7, Jul. 1990, New York, US pp. 456-458, XP149742; Y. H. Wang et al., GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes p. 456, colonne de gauche, ligne 27-colonne de droite, line 12; figure 1.
Electronics Letters vol. 25, No. 17, Aug. 17, 1989, Stevenage, GB pp. 1159-1160, XP53994 K. Tai et al., High-Reflectivity AlasO.52SbO.48/GaInAs(P) Distributed Bragg Mirror on InP Substrate for 1.3-1.55um Wavelengths.
Patent Abstracts of Japan, vol. 14, No. 312 (E-948) Jul. 5, 1990 & JP-A-02 101 751 (Fujitsu) Apr. 13, 1990.
Applied Physics Letters vol. 59, No. 9, Aug. 26, 1991, New York, US pp. 1011-1012, XP233713 W. Kowalsky, J. Mahnss Monolithically Integrated InGaAlAs Dielectric Reflectors for Vertical Cavity Optoelectronic Device p. 1011, colonne de droite, ligne 17-p. 1012, colonne de gauche, ligne 10, figure 1.
IEEE Photonics Technology Letters vol. 4, No. 10, Oct. 1992, New York, US pp. 1084-1086, XP316523 C. S. Shim et al., Electrical and Optical Properties of Deep-Red Top-Surface-Emitting Lasers p. 1086, colonne de gauche, ligne 24-colonne de droite, line 15.
Choa, F. S. et al.,"High reflectivity 1.55 micrometer InP/InGaAsP Bragg mirror grown by chemical beam epitaxy", A ppl. Phys. Lett. 59, No. 22, Nov. 25, 1991, pp. 2820-2822.
Devaud-Pledran Benoit
Loualiche Slimane
Bovernick Rodney B.
France Telecom
McNutt Robert
LandOfFree
Vertical cavity laser of low resistivity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vertical cavity laser of low resistivity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical cavity laser of low resistivity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2197859