Vertical cavity-emitting porous silicon carbide light-emitting d

Details Vertical cavity-emitting porous silicon carbide light-emitting d Vertical cavity-emitting porous silicon carbide light-emitting d

1997-05-22

1999-08-17

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 98, 257103, H01L 3300, H01L 310312

Patent

active

059397322

ABSTRACT:
A multilayered LED structure which has an active light-emitting layer of porous silicon carbide and a sequence of layers of porous silicon carbide underneath which serves as a quarter-wavelength multilayer mirror. The result is the electroluminescent emission of spectrally narrow visible light in the deep blue to UV range, in a highly directed pattern. The deep, intense blue luminescence is accomplished via the appropriate preparation and passivation of a single porous silicon carbide layer, followed by the deposition of a transparent, semiconducting layer, such as ITO (In.sub.2 O.sub.3) or ZnO.

REFERENCES:
patent: 5162878 (1992-11-01), Sasagawa et al.
patent: 5331180 (1994-07-01), Yamada
patent: 5569932 (1996-10-01), Shor
patent: 5757024 (1998-05-01), Fathauer et al.

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