Vertical carbon nanotube field effect transistors and arrays

Details Vertical carbon nanotube field effect transistors and arrays Vertical carbon nanotube field effect transistors and arrays

2004-02-12

2010-11-09

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S302000, C257S331000, C257S368000, C977S734000

Reexamination Certificate

active

07829883

ABSTRACT:
Carbon nanotube field effect transistors, arrays of carbon nanotube field effect transistors, device structures, and arrays of device structures. A stacked device structure includes a gate electrode layer and catalyst pads each coupled electrically with a source/drain contact. The gate electrode layer is divided into multiple gate electrodes and at least one semiconducting carbon nanotube is synthesized by a chemical vapor deposition process on each of the catalyst pads. The gate electrode has a sidewall covered by a gate dielectric and at least one semiconducting carbon nanotube adjacent to the sidewall of the gate electrode. Source/drain contacts are electrically coupled with opposite ends of the semiconducting carbon nanotube to complete the device structure. Multiple device structures may be configured either as a memory circuit or as a logic circuit.

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