Vertical bipolar transistor

Details Vertical bipolar transistor Vertical bipolar transistor

2005-05-17

2005-05-17

Eckert, George C. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Including additional component in same, non-isolated structure

C257S273000, C257S583000, C257S590000, C257S592000

Reexamination Certificate

active

06894367

ABSTRACT:
A vertical bipolar transistor has a J-FET incorporated in an epitaxial layer. The pinch-off voltage of the J-FET is less than the collector-emitter breakdown voltage of a bipolar transistor without the J-FET. This results in a considerable increase in the collector-emitter breakdown voltage up to 30 V or more being possible without having to except limitations with regard to dielectric strength and on resistivity

REFERENCES:
patent: 3920493 (1975-11-01), Kravitz
patent: 4000506 (1976-12-01), Hirai et al.
patent: 4007474 (1977-02-01), Yagi et al.
patent: 4143392 (1979-03-01), Mylroie
patent: 4151540 (1979-04-01), Sander et al.
patent: 4178190 (1979-12-01), Polinsky
patent: 4337474 (1982-06-01), Yukimoto
patent: 4739386 (1988-04-01), Tanizawa
patent: 5274267 (1993-12-01), Moksvold
patent: 5602417 (1997-02-01), Villa
patent: 6114746 (2000-09-01), Leonardi et al.
patent: 6281565 (2001-08-01), Yoshitake
patent: 56008873 (1981-01-01), None
patent: 58048461 (1983-03-01), None
patent: 60160164 (1985-08-01), None
patent: 60160165 (1985-08-01), None

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