Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Patent
1998-05-15
2000-05-30
Dutton, Brian
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
H01L 27082, H01L 27102, H01L 2970, H01L 3111
Patent
active
060693991
ABSTRACT:
A transistor including an epitaxial layer with a first conductivity type, a base buried region with a second conductivity type, and a sinker base region with the second conductivity type which extends from a main surface of the transistor to the base buried region, and delimits, together with the base buried region, emitter fingers in the epitaxial layer. The transistor further includes an emitter buried region with the first conductivity type and a doping level which is higher than that of the epitaxial layer. The emitter buried region is embedded in the epitaxial layer in a position adjacent to the base buried region. A sinker emitter region having the first conductivity type and a doping level which is higher than that of the epitaxial layer and extends from the main surface to the emitter buried region inside the emitter fingers. The emitter buried region and the sinker emitter region delimit in each emitter finger pairs of sections which are mutually spaced and delimit between one another a central region of the epitaxial layer. The sinker emitter region of each pair of sections of an emitter finger extend in the vicinity of mutually facing edges of the emitter buried region of the pair of sections.
REFERENCES:
patent: 4315271 (1982-02-01), Roger
patent: 5369298 (1994-11-01), Honda et al.
patent: 5408124 (1995-04-01), Palara
patent: 5525826 (1996-06-01), Palara
Carlson David V.
Dutton Brian
Galanthay Theodore E.
STMicroelectronics S.r.l.
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