Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2007-05-08
2009-11-10
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S197000, C257S536000, C257SE21375, C257SE21696, C438S235000
Reexamination Certificate
active
07615805
ABSTRACT:
Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure (106, 306, 400, 404) and the required current density throughput of an electrical contact structure (108, 308, 402, 406) are determined. A required electrical contact area is determined based on the required current density, and the electrical contact structure is then designed to minimize the required electrical contact area with respect to the emitter structure area.
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Chatterjee Tathagata
Smith Jeffrey P.
Springer Lily X.
Trogolo Joe R.
Brady III Wade J.
Franz Warren L.
Sefer A.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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