Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2006-12-12
2006-12-12
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257SE21523
Reexamination Certificate
active
07148558
ABSTRACT:
Disclosed are apparatus and method for limiting mobile charge (314) ingress within a silicon-on-insulator (SOI) substrate (300). A mask (308) is applied to the substrate to form an aperture (210) over a desired portion of the substrate near its outer edge. A buffer material (214), selected to impede mobile charge ingress, is implanted (310) through the aperture into the insulator layer (304) of the substrate to form a buffer structure (312).
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Hollingsworth Deems Randy
Rost Timothy A.
Brady III W. James
Garner Jacqueline J.
Ngo Ngan V.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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