Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2007-10-30
2007-10-30
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S136000, C257S347000
Reexamination Certificate
active
11031586
ABSTRACT:
The present invention provides a system for providing a cross-lateral junction field effect transistor (114) having desired high-performance desired voltage, frequency or current characteristics. The cross-lateral transistor is formed on a commercial semiconductor substrate (102). A channel structure (124) is formed along the substrate, having source (120) and drain (122) structures laterally formed on opposites sides thereof. A first gate structure (116) is formed along the substrate, laterally adjoining the channel structure orthogonal to the source and drain structures. A second gate structure (118) is formed along the substrate, laterally adjoining the channel structure, orthogonal to the source and drain structures and opposite the first gate structure.
REFERENCES:
patent: 5432377 (1995-07-01), Litwin
patent: 6396108 (2002-05-01), Krivokapic et al.
Howard Gregory E.
Swanson Leland
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Thien F
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