Versatile system for controlling semiconductor topography

Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing

Reexamination Certificate

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C700S108000, C438S633000

Reexamination Certificate

active

07010381

ABSTRACT:
The present invention defines a system (200) for selectively controlling post-CMP dishing effects occurring in semiconductor wafers having copper metallization. The system has a CMP system (202) that performs copper overpolish and barrier polish on a copper-based semiconductor wafer (206). A profilometer (204) measures actual dishing occurring in the copper metallization after polishing. An input data set (220) includes a dishing target for the semiconductor wafer. A data integrity function (212) evaluates the profilometer's measurement, and generates an indicator of the reliability of the measurement. A modeling function (214) receives the measurement, the indicator, and the dishing target, and evaluates any differential between the dishing target and actual dishing. The modeling function generates a processing target to eliminate the differential, and modifies this process responsive to the indicator. A processing control function (210) receives the processing target, and alters the copper overpolish or barrier polish responsive to the processing target.

REFERENCES:
patent: 5893756 (1999-04-01), Berman et al.
patent: 6004188 (1999-12-01), Roy
patent: 6251789 (2001-06-01), Wilson et al.
patent: 6274478 (2001-08-01), Farkas et al.

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