Venetian blind cell layout for RF power transistor

Details Venetian blind cell layout for RF power transistor Venetian blind cell layout for RF power transistor

1994-05-02

1995-05-09

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257266, 257341, 257773, 257786, 257923, H01L 2972

Patent

active

054142962

ABSTRACT:
Operating characteristics of an electronics device in which alternating currents flow are improved by reducing positive electromagnetic coupling between currents. This is accomplished by altering the direction of a current flow to obtain negative coupling through current flow in the same direction, or by minimizing electromagnetic coupling through perpendicular current flow, or by increasing the spacing between two electromagnetically coupled currents. In a bipolar transistor structure a feed structure for emitter and base current includes wire bonding pads aligned so that emitter current and base current flow to wire bonding pads perpendicular to the direction of collector current flow and with adjacent emitter currents and base currents flowing in the same direction. Each feed structure includes a plurality of interdigitated fingers for contacting emitter and base regions, all emitter and base currents in said interdigitated fingers of all feed structures flowing in the same direction as the collector.

REFERENCES:
patent: 3623218 (1971-11-01), Mitari et al.
patent: 4236171 (1980-11-01), Shen
patent: 4642665 (1987-02-01), Lade et al.

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