Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1990-12-12
1993-07-06
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257 9, 257 12, H01L 29205, H01L 2980
Patent
active
052258955
ABSTRACT:
An electron supply layer, a quantum well layer, a first barrier layer, a quantum well layer and a second barrier layer are formed in that order on a GaAs substrate to obtain a device, and source, drain and gate electrodes are provided on the surface of this device. In the above described quantum well layers, the lowest sub-band energies of respective carriers largely differ from each other. Accordingly, one of the above quantum well layers serves as a high-speed channel, and the other serves as a low-speed channel. The change in current value with the application of a gate bias depends only on the speed at which electrons move from the high-speed channel to the low-speed channel. Consequently, a velocity-modulation transistor can be constructed which operates at substantially high speed.
REFERENCES:
patent: 4899201 (1990-02-01), Xu et al.
Velocity-Modulation Transistor (VMT)--A New Field-Effect Transistor Concept, Hiroyuki Sakaki, May 22, 1982.
Electron Effective-Mass Modulation Transistor, Y. Tokura & N. Susa, Nov. 7, 1989.
Inoue Daijiro
Matsumura Kohji
Sawada Minoru
Jackson, Jr. Jerome
Sanyo Electric Co,. Ltd.
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