Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1991-08-14
1993-11-02
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257 20, H01L 29205, H01L 2980
Patent
active
052586324
ABSTRACT:
A velocity modulation transistor has a first barrier layer, first channel layer, second barrier layer, second channel layer, third barrier layer, input/output electrode that and control electrode are laminated on a semi-insulative substrate in this order, The electron affinity of the first channel layer is larger than that of the second channel layer. The energy difference between the first level and the second level can be obtained according to the difference in the electron affinity between the first and second channel layers as well as to the control of the film thickness of the first and second channel layers, whereby the velocity modulation effect at room temperature becomes large.
REFERENCES:
patent: 4194935 (1980-03-01), Dingle
patent: 4688061 (1987-08-01), Sakaki
patent: 4764796 (1988-08-01), Sasaki et al.
patent: 4806998 (1989-02-01), Vintner
patent: 4894691 (1990-01-01), Matsui
H. Sakaki, Japanese Journal of Applied Physics, vol. 21, No. 6 Jun. 1982 pp. L381-L383.
Okuno, et al., Extended Abstracts (The 50th Autumn Meeting 1989), The Japan Society of Applied Physics.
Jackson Jerome
Sanyo Electric Co,. Ltd.
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