VCSEL with selective oxide transition regions

Coherent light generators – Particular active media – Semiconductor

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372 96, H01S 319, H01S 308

Patent

active

057646716

ABSTRACT:
A semiconductive substrate (101) with a surface (102) having a first stack of distributed Bragg reflectors (109) disposed on the surface (102) of the semiconductive substrate (101). A first transition region (140) is disposed on the first stack of distributed Bragg reflectors (109) with a first cladding region (113) being disposed on the first transition region (140). An active area (117) is disposed on the first cladding region (113) with a second cladding region (123) being disposed on the active area (117). A second transition region (145) having a layer (255) of aluminum arsenide is disposed on the second cladding region (123) with a second stack of distributed Bragg reflectors (127) being disposed on the second transition region (145).

REFERENCES:
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patent: 5557627 (1996-09-01), Schneider, Jr. et al.
patent: 5586135 (1996-12-01), Yoshida et al.
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Schneider, Jr. et al, "Efficient Room-Temperature Continuous-Wave AlGalnP/AlGaAs Visible (670 nm) Vertical-Cavity Surface-Emitting Laser Didoes", IEEE Photonics Technology Letters, vol. 6, No. 3, pp. 313-316, Mar. 1994.
Hagerott et al, "High Efficiency AlGalnP-based 660-680 nm Vertical-Cavity Surface Emitting Lasers", Electronics Letters, vol. 31, No. 3, pp. 196-198, Feb. 1995.
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Ohiso et al, "1.55um Vertical-Cavity Surface-Emitting Lasers with Wafer-Fused InGaAsP/InP-GaAs/AlAs DBRs", Electronics Letters, vol. 32, No. 16, pp. 1483-1484, Aug. 1996.

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