VCSEL with reduced light scattering within optical cavity

Details VCSEL with reduced light scattering within optical cavity VCSEL with reduced light scattering within optical cavity

2009-02-25

2010-12-14

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050124

Reexamination Certificate

active

07852895

ABSTRACT:
A VCSEL with a structure able to reduce the scattering within the optical cavity and its manufacturing method are disclosed. The VCSEL of the present invention provides, on the semiconductor substrate, the first DBR, the active layer, the p-type spacer layer, the heavily doped p-type mesa, the heavily doped n-type layer, the first n-type spacer and the second DBR in this order. The heavily doped n-type layer, which is formed so as to cover the p-type spacer layer and the heavily doped p-type mesa, forms the tunnel junction with respect to the heavily doped p-type mesa. Because the height, which is appeared in the surface of the n-type spacer layer, reflects the height of the heavily doped p-type mesa and is comparatively small, the light scattering between the second DBR and the n-type spacer layer is suppressed.

REFERENCES:
patent: 2004/0218655 (2004-11-01), Tandon et al.
patent: 2005/0063440 (2005-03-01), Deppe
N. Nishiyama et al., “High efficiency long wavelength VCSEL on InP grown by MOCVD”, Electronics Letters, vol. 39 (5), 2003, pp. 437-439.

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