VCSEL with Al-free cavity region

Details VCSEL with Al-free cavity region VCSEL with Al-free cavity region

1994-06-15

1995-07-11

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, 372 50, H01S 3085, H01S 3131

Patent

active

054328098

ABSTRACT:
Patterned-mirrors for VCSELs are fabricated by forming a first mirror stack of a plurality of pairs of relatively high and low index of refraction layers of AlGaAs, forming an active region of aluminum-free material on the first mirror stack, and forming a second mirror stack of a plurality of pairs of relatively high and low index of refraction layers of AlGaAs. The second mirror stack can be selectively etched to the active region by utilizing the aluminum-free active region as an etch stop.

REFERENCES:
patent: 4991179 (1991-02-01), Deppe et al.
patent: 5216686 (1993-06-01), Holm et al.
patent: 5274655 (1993-12-01), Shieh et al.
patent: 5317587 (1994-05-01), Ackley et al.
patent: 5328854 (1994-07-01), Vakshoori et al.

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