VCSEL pumped in a monolithically optical manner and...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S069000

Reexamination Certificate

active

07570682

ABSTRACT:
A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The pump layer (6) follows the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied on the side of the semiconductor laser device which is closer to the pump layer (6) than to the conductive layer (13). An electrical field can be applied between this contact (9) and the conductive layer (13) for generating pump radiation (7) by charge carrier injection.

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Michael D. Gerhold, et al., “Novel Design of a Hybrid-Cavity Surface Emitting Laser”, IEEE Journal of Quantum Electronics, vol. 34, No. 3, pp. 506-511, Mar. 1998.

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