VCSEL and the fabrication method of the same

Details VCSEL and the fabrication method of the same VCSEL and the fabrication method of the same

2007-01-30

2007-01-30

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S604000

Reexamination Certificate

active

10777759

ABSTRACT:
A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision.

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patent: 6618414 (2003-09-01), Wasserbauer et al.
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