Varying carrier mobility in semiconductor devices to achieve...

Details Varying carrier mobility in semiconductor devices to achieve... Varying carrier mobility in semiconductor devices to achieve...

2006-08-22

2006-08-22

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S351000, C257S357000, C257S369000

Reexamination Certificate

active

07095065

ABSTRACT:
A semiconductor device may include a substrate and an insulating layer formed on the substrate. A first device may be formed on the insulating layer, including a first fin. The first fin may be formed on the insulating layer and may have a first fin aspect ratio. A second device may be formed on the insulating layer, including a second fin. The second fin may be formed on the insulating layer and may have a second fin aspect ratio different from the first fin aspect ratio.

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