Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-05-31
2009-06-23
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S565000, C257SE29174
Reexamination Certificate
active
07550787
ABSTRACT:
Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a substrate; forming a mask layer on the substrate including a first opening having a first dimension; and substantially simultaneously forming through the first opening a first impurity region at a first depth in the substrate (subcollector) and a second impurity region at a second depth different than the first depth in the substrate. The breakdown voltage of a device can be controlled by the size of the first dimension, i.e., the distance of first opening to an active region of the device. Numerous different sized openings can be used to provide devices with different breakdown voltages using a single mask and single implant. A semiconductor device is also disclosed.
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Coolbaugh Douglas D.
Lanzerotti Louis D.
Orner Bradley A.
Rascoe Jay S.
Sheridan David C.
Canale Anthony J.
Estrada Michelle
Hoffman Warnick LLC
International Business Machines - Corporation
Stark Jarrett J
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