Variable wavelength semiconductor laser

Details Variable wavelength semiconductor laser Variable wavelength semiconductor laser

1998-03-31

2000-04-18

Sanghavi, Hemang

Coherent light generators

Particular active media

Semiconductor

372 11, 372 18, 372 20, 372 43, 372 46, H01S 319

Patent

active

060524006

ABSTRACT:
The object of the present invention is to provide a variable wavelength semiconductor laser which is large in ontinuous variable wavelength width, simple and convenient in structure, easy to produce, monolithic and small in size, and easy to handle. The variable wavelength semiconductor laser includes an optical gain region formed from two-dimensional or three-dimensional carrier confinement structures having sizes approximately of a thermal de Broglie wavelength whose size dispersion is controlled so that a gain spectrum covers a required variable wavelength region for generating and amplifying light when current is injected, a light absorption control region having a light absorption coefficient which varies depending upon a current injection amount, an optical resonator including the optical gain region and the light absorption control region, and control means for controlling current amounts or voltage values to be injected to the optical gain region and the light absorption control region.

REFERENCES:
patent: 5799024 (1998-08-01), Bowers et al.
"Semicondcuotr Laser Transmitters for WDM" Verdiell et al SPIE, vol. 2690; pp. 286-295 No date.
"Room Temperature lasing ffrom InGaAs quantum dots" Mirin et al Electronics Letters; Aug. 29, 1996; vol. 32, No. 18; pp. 1732-1734.
"Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer" Shoji et al Electronics Letters; Oct. 10, 1996; vol. 32, No. 21; pp. 2023-2024.
"Control of Lasign spectra for semiconductor lasers--Spectral linewidth narrowing and wavelength tuning" Okai Applied Physics; vol. 63; 1994; pp. 4-15 No month.

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