Variable wavelength semiconductor laser

Details Variable wavelength semiconductor laser Variable wavelength semiconductor laser

1993-04-26

1994-08-23

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 34, 372 45, 372 96, H01S 319

Patent

active

053413911

ABSTRACT:
A semiconductor laser device has an active layer, a cladding layer, and a contact layer successively disposed on a semiconductor substrate. A pair of electrodes for passing a current parallel to the cladding and contact layers and perpendicular to the resonator direction of the active layer for heating the active layer are disposed opposite the stripe-shaped active layer. The pair of electrodes are disposed on the contact layer and the contact layer between the pair of electrodes is missing. One of the pair of electrodes may be disposed directly on the cladding layer. An improved wavelength change response property as a function of the active layer temperature controlling current flowing between the two electrodes is obtained. Further, the production of the laser is easy.

REFERENCES:
patent: 5140605 (1992-08-01), Paoli et al.
patent: 5173909 (1992-12-01), Sakano et al.
patent: 5262658 (1993-11-01), Jankowski
Hitachi et al., "Wavelength Tunable DFB Laser With A Heater Wire On The Tip", Japan Society of Applied Physics and Related Societies, 1991, p. 969 (no month).

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