Variable temperature and dose atomic layer deposition

Details Variable temperature and dose atomic layer deposition Variable temperature and dose atomic layer deposition

2007-12-11

2007-12-11

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

C438S680000, C438S763000, C257SE21171

Reexamination Certificate

active

10674883

ABSTRACT:
A variable temperature and/or reactant dose atomic layer deposition (VTD-ALD) process modulates ALD reactor conditions (e.g., temperature, flow rates, etc.) during growth of a film (e.g., metallic) on a wafer to produce different film properties a different film depths.

REFERENCES:
patent: 5480818 (1996-01-01), Matsumoto et al.
patent: 6144060 (2000-11-01), Park et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 2002/0144786 (2002-10-01), Chiang et al.
patent: 2002/0195056 (2002-12-01), Sandhu et al.
patent: 2005/0016956 (2005-01-01), Liu et al.

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