Variable-spot scanning in an electron beam exposure system

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2503581, 378 58, H01J 3700

Patent

active

043933122

ABSTRACT:
For a given resolution or address dimension, the pattern-writing speed of an electron beam exposure system is increased by utilizing a new mode of raster scanning. In the new mode, the writing spot dimensions of the electron beam are varied rapidly during the scan. In an electron column designed for variable-spot raster scanning, an illuminated aperture is demagnified to form the writing spot. By imaging a first aperture upon a second aperture and rapidly deflecting the image of the first aperture, the portion of the second aperture that is illuminated by the electron beam is altered. In that way, the spot size is selectively varied in a high-speed way during the raster scanning process.

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patent: 3956635 (1976-05-01), Chang
"A New Electron Beam Exposure Scheme of Scanning Type", Soma et al., IEDM Technical Dig., pp. 20-23, 1975.
"The Application of Electron/Ion Beam Technology to Microelectronics", Brewer, IEEE Spectrum, Jan. 1971, pp. 23-36.
"A High Current Square Spot Probe for Micro Pattern Generation", Pfeiffer et al., Septieme Congres International de Microscopie Electronique, 1970, pp. 63-64.

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