Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1977-11-29
1983-07-12
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2503581, 378 58, H01J 3700
Patent
active
043933122
ABSTRACT:
For a given resolution or address dimension, the pattern-writing speed of an electron beam exposure system is increased by utilizing a new mode of raster scanning. In the new mode, the writing spot dimensions of the electron beam are varied rapidly during the scan. In an electron column designed for variable-spot raster scanning, an illuminated aperture is demagnified to form the writing spot. By imaging a first aperture upon a second aperture and rapidly deflecting the image of the first aperture, the portion of the second aperture that is illuminated by the electron beam is altered. In that way, the spot size is selectively varied in a high-speed way during the raster scanning process.
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"The Application of Electron/Ion Beam Technology to Microelectronics", Brewer, IEEE Spectrum, Jan. 1971, pp. 23-36.
"A High Current Square Spot Probe for Micro Pattern Generation", Pfeiffer et al., Septieme Congres International de Microscopie Electronique, 1970, pp. 63-64.
Collier Robert J.
Thomson Michael G. R.
Anderson Bruce C.
Bell Telephone Laboratories Incorporated
Canepa Lucian C.
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