Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device – Plural diodes in same non-isolated structure – or device...
Reexamination Certificate
2005-01-25
2005-01-25
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
Plural diodes in same non-isolated structure, or device...
C257S312000, C438S379000
Reexamination Certificate
active
06847095
ABSTRACT:
In one embodiment, a varactor includes a first node and a second node. The varactor includes: at least one first varactor element including a source, a drain, and a p-type doped gate; at least one second varactor element including a source, a drain, and an n-type doped gate; and at least one third varactor element including a source, a drain, and an intermediately doped gate, the intermediately doped gate having doping characteristics intermediate to doping characteristics of the p-type and n-type gates. The varactor includes one or more wells in a substrate region underlying the first, second, and third varactor elements. The first, second, and third varactor elements are coupled in parallel between the first and second nodes.
REFERENCES:
patent: 6407412 (2002-06-01), Iniewski et al.
patent: 6538519 (2003-03-01), Lo et al.
patent: 20020074589 (2002-06-01), Benaissa et al.
patent: 20030136992 (2003-07-01), Adan
Bellaouar Abdellatif
Benaissa Kamel
Brady III Wade James
Pham Long
Pizarro-Crespo Marcos D.
Tung Yingsheng
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