Variable microwave attenuator

Wave transmission lines and networks – Attenuators

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333 97R, H01P 122

Patent

active

040094561

ABSTRACT:
A broadband microwave attenuator is formed by connecting a plurality of PIN diodes in a modified Tee network. Four semiconductor chips of PIN diode material are arranged in a flat layer sandwiched between conductors to form a strip-line configuration of a TEM transmission line, whereby the diodes are part of the line. This strip-line construction is used with outer diodes connected in series circuit relation between input and output terminals, and inner diodes in shunt relation to ground to form the Tee network. The diodes are constructed as silicon chips and are mounted in very close relation with a substantially uniform conductive strip forming the series-circuit connection between the central diodes.

REFERENCES:
patent: 3105922 (1963-10-01), Fukui et al.
patent: 3453564 (1969-07-01), Russell
patent: 3487272 (1969-12-01), Siebertz et al.
patent: 3597706 (1971-08-01), Kibler
patent: 3713037 (1973-01-01), Hopfer

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