Variable level memory

Details Variable level memory Variable level memory

2005-03-22

2005-03-22

Tran, M. (Department: 2818)

Static information storage and retrieval

Floating gate

Multiple values

C365S185220

Reexamination Certificate

active

06870767

ABSTRACT:
There exists a tradeoff between the fidelity of data storage and the number of bits stored in a memory cell. The number of bits may be increased per cell when fidelity is less important. The number of bits per cell may be decreased when fidelity is more important. A memory, in some embodiments, may change between storage modes on a cell by cell basis.

REFERENCES:
patent: 5828601 (1998-10-01), Hollmer et al.
patent: 6205057 (2001-03-01), Pan
patent: 6215697 (2001-04-01), Lu et al.
patent: 6396742 (2002-05-01), Korsh et al.
patent: 6522586 (2003-02-01), Wong

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