Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-03-31
1996-08-06
Gregory, Bernarr E.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 24, 257 27, H01L 2906
Patent
active
H00015709
ABSTRACT:
A quantum interference device in the form of a variable lateral confinement resonant tunneling transistor having a quantum waveguide structure including a primary current transmission path defined by a region between source and drain electrodes and where there is a resonance region therebetween in which quantum interference of tunneling wave functions establish a resonance tunneling condition that extends beyond the primary current path. Upon the application of a voltage across the drain and source electrodes, a tunneling current can be made to flow. A gate electrode formed on the quantum well structure remote from the primary current transmission path includes a variable depletion region thereunder or an electrostatic pinch off region, the size of which is a function of the magnitude of the bias voltage applied thereto. The size of the depletion region or the pinch off region affects the dimensions of the resonance region and accordingly the current flow between the source and drain electrodes as a result of a change in the energy and momentum conditions for resonance tunneling.
REFERENCES:
patent: 4812886 (1989-03-01), Smith, III
patent: 4926232 (1990-05-01), Ando et al.
patent: 4959696 (1990-09-01), Frensley et al.
patent: 4973858 (1990-11-01), Chang
patent: 4974037 (1990-11-01), Beneking
patent: 4999697 (1991-03-01), Capasso et al.
patent: 5017973 (1991-05-01), Mizuta et al.
patent: 5021863 (1991-06-01), Yokoyama
patent: 5023674 (1991-06-01), Hikosaka et al.
patent: 5093699 (1992-03-01), Weichold et al.
patent: 5130766 (1992-07-01), Arimoto
patent: 5234848 (1993-08-01), Seabaugh
patent: 5283445 (1994-02-01), Saito
"Resonant Tunneling In Semiconductor Double Barriers", L. L. Chang et al, plied Physics Letters, vol. 24, No. 12, pp. 593-595, 15 Jun. 1974.
F. Beltram et al, Applied Physical Letters, vol. 53, p. 219 (1988).
A. A. Grinberg et al, Journal of Applied Physics, vol. 66, p. 425 (1989).
A. C. Seabaugh et al, IEEE Trans. Electronic Devices, vol. 36, p. 2328 (1989).
C. H. Yang, Applied Physical Letters, vol. 60, p. 1250 (1992).
Harvey James F.
Lux Robert A.
Anderson William H.
Gregory Bernarr E.
The United States of America as represented by the Secretary of
Zelenka Michael
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