Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1982-02-17
1984-12-25
Clawson, Jr., Joseph E.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 51, 357 59, 307548, 307577, 330282, 330284, 330144, H01L 2978
Patent
active
044907346
ABSTRACT:
A variable impedance circuit employing an RIS field effect transistor which greatly reduces distortion at low and high frequencies is obtained by providing means for applying voltages to the RIS field effect transistor at values determined by the following equations: ##EQU1## where V.sub.BG is the backgate voltage, V.sub.D is the voltage applied to the drain, V.sub.S is the voltage applied to the source, V.sub.BO is the DC component of the voltage applied to the substrate, K is a constant, .alpha..sub.1 is a constant, .alpha..sub.2 is a constant, V.sub.GS is the voltage applied to the gate at the end nearest the source, V.sub.GD is voltage applied to the gate at the end nearest the drain and V.sub.GO is a control voltage.
REFERENCES:
patent: 3714522 (1973-01-01), Komiya et al.
patent: 3943286 (1976-03-01), Tsurushima
patent: 3968452 (1976-07-01), Sahara et al.
patent: 3999210 (1976-12-01), Yamada
patent: 4093874 (1978-06-01), Pollitt
patent: 4157557 (1979-06-01), Sato et al.
C. Hu et al., "A Resistive-Gated IGFET Tetrode," IEEE Trans. on Elec. Dev. vol. Ed-18 #7, Jul. 1971, pp. 418-425.
Clawson Jr. Joseph E.
Sony Corporation
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