Variable gain switch

Details Variable gain switch Variable gain switch

1988-04-14

1992-07-07

Larkins, William D.

357 34, 357 13, 357 52, H01L 2972, H01L 29784

Patent

active

051287420

ABSTRACT:
A power bipolar transistor has a MOSFET located within the base region, the MOSFET shorting the transistor emitter and base regions together when the bipolar transistor is in an off condition with a large base to collector voltage. The bipolar transistor is provided with floating guard rings, and the gate of the MOSFET is connected to one of these floating guard rings, so that when the depletion region from the base to collector junction reaches this floating guard ring, the MOSFET gate receives a voltage to turn on the MOSFET and provide the emitter to base short.

REFERENCES:
patent: 3566213 (1971-02-01), Kaiser
patent: 4567502 (1986-01-01), Nakagawa et al.

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