Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1994-08-19
1995-09-26
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257192, 257217, 257443, 257462, H01L 2714, H01L 3100
Patent
active
054536308
ABSTRACT:
An optical detector comprised of a MESFET having a larger than usual separation between its source and drain electrodes and a channel between the source and drain electrodes doped with carriers having a density of at least 10.sup.18 /cm.sup.3 whereby variation in the voltage of the gate electrode changes the optical gain.
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Herczfeld, P. R.: Higgins, T.; Madjar, A.; and Paolella, A.; "Optical Resse of the GaAs MESFET at Microwave Frequencies and Applications", IEEE Journal, Jun. 1991.
Herczfeld, P. R.; Madjar, A.; and Paolella, A.; and Sturzebecher, D.; "Optically Controlled GaAs MMIC Switch Using a MESFET as an Optical Detector", IEEE Journal, Jun. 1990.
Herczfeld Peter R.
Paolella Arthur
Anderson William H.
Mintel William
The United States of America as represented by the Secretary of
Tran Minhloan
Zelenka Michael
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