Variable density and variable persistent organic memory...

Details Variable density and variable persistent organic memory... Variable density and variable persistent organic memory...

2007-09-25

2007-09-25

Lebetritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S099000, C257S040000

Reexamination Certificate

active

11034071

ABSTRACT:
An organic memory device comprising two electrodes having a selectively conductive decay media between the two electrodes provides a capability to control a persistence level for information stored in an organic memory cell. A resistive state of the cell controls a conductive decay rate of the cell. A high and/or low resistive state can provide a fast and/or slow rate of conductive decay. One aspect of the present invention can have a high resistive state equating to an exponential conductive decay rate. Another aspect of the present invention can have a low resistive state equating to a logarithmic conductive decay rate. Yet another aspect relates to control of an organic memory device by determining a power state and setting a resistive state of an organic memory cell based upon a current power state and/or an imminent power state.

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