Variable capacity diode with hyperabrupt profile and plane struc

Details Variable capacity diode with hyperabrupt profile and plane struc Variable capacity diode with hyperabrupt profile and plane struc

1988-04-04

1989-05-02

James, Andrew J.

357 15, 357 40, 357 90, 357 91, H01L 2992, H01L 2948

Patent

active

048273198

ABSTRACT:
The invention provides a variable capacity diode with a plane structure so that it may be formed in an integrated circuit, this diode has, on the substrate, three coplanar regions. The first and second uniformly doped regions support the contact making metallizations. The transition region has a variation of doping level, low at one end and high at the other end. This variation is obtained by implantation by means of a focused ion beam, with constant energy and sweeping at increasing doses, which allows a hyperabrupt profile to be obtained. The diode is a p-n junction of Schottky contact diode.

REFERENCES:
patent: 3636420 (1972-01-01), Vendelin et al.
patent: 3706128 (1972-12-01), Heer
patent: 3849789 (1974-11-01), Cordes et al.
patent: 4226648 (1980-10-01), Goodwin et al.
patent: 4373166 (1983-02-01), Bergeron et al.
Kannam et al, "Design Consideration of Hyperabrupt Varactor Diodes", IEEE Transactions on Electron Devices, vol. ED-18, No. 2, Feb. 1971.

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