Variable capacitor structure and method of manufacture

Details Variable capacitor structure and method of manufacture Variable capacitor structure and method of manufacture

2007-05-01

2007-05-01

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Voltage variable capacitance device manufacture

C438S387000, C257SE27049

Reexamination Certificate

active

10630642

ABSTRACT:
A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type ion-doped well is formed within the substrate. The first type ion-doped well has a cavity. The first type ion-doped buried layer is in the substrate underneath the first type ion-doped well. The first type ion-doped buried layer and the first type ion-doped well are connected. The second type ion-doped region is at the bottom of the cavity of the first type ion-doped well. The conductive layer is above and in connection with the first type ion-doped buried layer.

REFERENCES:
patent: 4694561 (1987-09-01), Lebowitz et al.
patent: 6835977 (2004-12-01), Gan et al.

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