Variable capacitance semiconductor diode

Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device – Plural diodes in same non-isolated structure – or device...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257598, H01L 2993

Patent

active

057147973

ABSTRACT:
A semiconductor body has a first region of one conductivity type coupled to a first electrode. A second region of the opposite conductivity type is coupled to a second electrode and is provided within the first region to form a first pn junction with the first region. At least one further region of the opposite conductivity type is formed within the first region and spaced from the second region so as to form a further pn junction with the first region with each of the first and further pn junctions making a contribution to the capacitance of the diode. This capacitance varies during operation of the diode with a reverse-biasing voltage applied between the first and second electrodes. A coupling region of the opposite conductivity type and more lowly doped than the second and further regions provides a resistive path for free charge carriers of the opposite conductivity type between the second and further region and is sufficiently lowly doped that when a reverse-biasing voltage applied between the first and second electrodes reaches a predetermined value, at least part of the coupling region becomes depleted of free charge carriers to interrupt the resistive path and thereby resistively decouple the second and further region so that the capacitive contributions of the first and further pn junctions are no longer coupled in parallel with one another by the resistive path and the overall capacitance of the diode is reduced.

REFERENCES:
patent: 3411053 (1968-11-01), Wiesner
patent: 3506888 (1970-04-01), Siebertz et al.
patent: 3612964 (1971-10-01), Kawazu
patent: 3890635 (1975-06-01), Engeler
patent: 4399417 (1983-08-01), Ballantyne et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Variable capacitance semiconductor diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Variable capacitance semiconductor diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Variable capacitance semiconductor diode will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-665297

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.