Patent
1990-01-17
1991-01-22
Hille, Rolf
357 20, 357 51, 357 89, H01L 2992
Patent
active
049874594
ABSTRACT:
A variable-capacitance diode element having a wide capacitance variation range is disclosed which comprises an epitaxial layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type; a diffusion layer of the first conductivity type which is formed in the epitaxial layer with a higher concentration than said epitaxial layer by means of ion implantation; at least one diffusion layer of a second conductivity type which is formed in the diffusion layer of the first conductivity type so as to define PN junction; and a first-conductivity type buried layer of a low resistivity which is formed the boundary portion between the semiconductor substrate and the epitaxial layer where a depletion layer reaches which occurs in response to a reverse bias voltage being applied to the PN junction, whereby the depletion layer is caused to extend to a maximum possible effect.
REFERENCES:
patent: 3646411 (1972-02-01), Iwasa
patent: 3891479 (1975-06-01), Zwernemann
patent: 3909119 (1975-09-01), Wolley
patent: 3959809 (1976-05-01), Allison
patent: 4003009 (1977-01-01), Watanabe
patent: 4106953 (1978-08-01), Onodera
Hille Rolf
Toko Inc.
Tran T. Minh Loan
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