Variable capacitance diode device and method of manufacturing sa

Details Variable capacitance diode device and method of manufacturing sa Variable capacitance diode device and method of manufacturing sa

1996-06-20

1998-10-20

Nga, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

With specified dopant profile

257601, 257602, H01L 2993

Patent

active

058250751

ABSTRACT:
When a variable capacitance diode device is formed on each of chips obtained by cutting off a wafer, the capacitance values of the diode devices formed on the chips disperse for each wafer due to change in the manufacturing process conditions. To reduced the dispersion in capacitance value of the diode devices, a plurality of variable capacitance diodes (10A, 10B and 10C) are formed on the same semiconductor chip (2) in such a way that the areas of the PN junctions (4A, 4B and 4C) of the respective diodes are different from each other. Further, only one variable capacitance diode (e.g., 10C) which can satisfy a predetermined strict standard is selected and connected to a terminal (11) for use.

REFERENCES:
patent: 4456917 (1984-06-01), Sato et al.
patent: 4529994 (1985-07-01), Sakai
patent: 5220193 (1993-06-01), Kasahara et al.
patent: 5225708 (1993-07-01), Kasahara

Affiliated with

Also associated with

Rating

Variable capacitance diode device and method of manufacturing sa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Variable capacitance diode device and method of manufacturing sa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Variable capacitance diode device and method of manufacturing sa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-247445