Variable capacitance diode device

Details Variable capacitance diode device Variable capacitance diode device

1993-05-27

1994-08-16

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

With specified dopant profile

257595, 257596, H01L 2993

Patent

active

053389662

ABSTRACT:
There is provided a variable capacitance diode device. The device comprises a semiconductor substrate of a first conductive type, an epitaxial layer of the first conductive type with a high specific resistance formed on the semiconductor substrate, a first diffusion layer of the first conductive type, in which impurities are more diffused than the epitaxial layer, formed in the epitaxial layer and a second diffusion layer of a second conductive type which forms a junction with the first diffusion layer. The first diffusion layer is formed in a hollow cylindrical body or a hollow square pole body, etc., so as to enlarge an outer peripheral area thereof.

REFERENCES:
patent: 3466010 (1969-08-01), Domemico et al.
patent: 3506888 (1970-04-01), Siebertz et al.
patent: 3538397 (1970-11-01), Davis
patent: 3893153 (1975-07-01), Page et al.
patent: 3914782 (1975-10-01), Nakata
patent: 4267557 (1981-05-01), Muramoto et al.
patent: 4652895 (1987-03-01), Roskos

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