Variable capacitance diode and method of making the same

Details Variable capacitance diode and method of making the same Variable capacitance diode and method of making the same

1981-07-08

1984-03-20

Edlow, Martin H.

357 15, 357 89, H01L 2992, H01L 2948

Patent

active

044384459

ABSTRACT:
A variable capacitance diode comprises a low resistance semi-conductor substrate on which is epitaxially deposited three layers, a first layer adjacent the substrate having an impurity concentration which decreases towards the substrate, a very thin intermediate region and a relatively thin surface region of lower doping than the intermediate region, a barrier being formed on or in the outer surface of the relativey thin surface region.
The invention also includes a method of making such a diode.

REFERENCES:
patent: 3915765 (1975-10-01), Cho et al.
patent: 4226648 (1980-10-01), Goodwin et al.
patent: 4250514 (1981-02-01), Raabe
Fujimoto et al., "Gallium Arsenide Diffused Diode, ECL-2172", Rev. Electrical Comm. Lab. vol. 18, No. 9-10, pp. 632-637, Sep.-Oct. 1970.
Jackson et al., "Hyperabrupt Epitaxial Tuning Diodes" Solid State Electronics, vol. 20, No. 6, pp. 485-490, Jun. 1977.
Kumar et al., Variability Study and Design Considerations of Hyperabrupt Junction Voltage Variable Capacitors, Solid-State Electronics, 1976, vol. 19, pp. 519-525.

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