Variable capacitance device having a plurality of capacitance el

Tuners – Tuner unit directly responsive to voltage and/or current... – Reactance tuning

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307303, 307304, 334 55, 357 51, H03J 524, H03J 318

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042164516

ABSTRACT:
A variable capacitance semiconductor device is provided wherein a plurality of capacitance elements each having a fixed capacitance value are coupled in parallel with each other and at least two insulated gate field effect transistors are provided for each of the plurality of capacitance elements, whereby the total length of the insulated gate field effect transistors is made as long as possible and accordingly the resistance across the transistors when these are turned on becomes small. Each capacitance element may comprise a single semiconductor substrate of one conductivity type, an opposite conductivity type region formed on one surface of the substrate, an insulating layer formed on the opposite conductivity type region and an electrode formed on the insulating layer. The above described at least two insulated gate field effect transistors are formed such that the above described substrate is shared. Preferably, a direct current voltage is applied to the opposite conductivity type region in the direction for decreasing the junction capacitance between the opposite conductivity type region and the substrate occuring when the above described transistors are turned off.

REFERENCES:
patent: 3427514 (1969-02-01), Olmstead et al.
patent: 3657560 (1972-04-01), Proebsting
patent: 3808472 (1974-04-01), Engeler
patent: 4141027 (1979-02-01), Baldwin et al.
Eaton, S. S. "Sapphire Brings Out the Best in C-Mos", Electronics, Jun. 1975, pp. 115-118.
Benz, H. F. et al, "A Linear Voltage-Tunable Distributed Null Device", IEEE Journal of Solid-State Circuits, Dec. 1972, pp. 499-503.

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