Variable capacitance device and process for manufacturing...

Details Variable capacitance device and process for manufacturing... Variable capacitance device and process for manufacturing...

2005-03-15

2005-03-15

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

Voltage variable capacitance device manufacture

C438S154000, C438S155000, C438S210000, C438S239000, C438S394000, C438S395000

Reexamination Certificate

active

06867107

ABSTRACT:
A variable capacitance device comprising, in a semiconductor layer formed on a substrate via an buried oxide film: an n− region132formed in the shape of a ring and containing an n-type dopant; an anode133adjoined to the outer periphery of the n− region132,the anode133being formed in the shape of a ring and containing a p-type dopant; and a cathode131adjoined to the inner periphery of the n− region132,the third region containing an n-type dopant, wherein the dopant concentration in the n− region132is lower than that in each of the anode133and the cathode131.

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Porret, et al., “Design of High-Q Varactors for Low-Power Wireless Appilcations Using a Standard CMOS Process”, IEEE Journal of Solid-State Circuits, vol. 35, No. 3, Mar. 2000.*
Keqiang Shen, et al,. “ A Three-Terminal SOI Gated Varactor for RF Applications,” IEEE Transactions on electron device, vol. 48, Feb. 2001. pp. 289-292.

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