Variable breakdown characteristic diode

Details Variable breakdown characteristic diode Variable breakdown characteristic diode

2005-03-22

2009-08-25

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

Reverse bias tunneling structure

C257S040000, C257S200000, C257SE29170

Reexamination Certificate

active

07579631

ABSTRACT:
A memory cell made of at least two electrodes with a controllably conductive media between the at least two electrodes is disclosed. The controllably conductive media includes a passive layer made of super ionic material and an active layer. When an external stimuli, such as an applied electric field, is imposed upon the first and second electrode, ions move and dope and/or de-dope the polymer. The applied external stimuli used to dope the polymer is larger than an applied external stimuli to operate the memory cell. The polymer functions as a variable breakdown characteristic diode with electrical characteristics which are a consequence of the doping degree. The memory element may have a current limited read signal. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices such as computers, hand-held electronic devices and memory devices containing the memory cell(s) are also disclosed.

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Web text book document by Van Zeghbroeck Chater 4 published by University of Colorado year 2004 about Diode breakdown voltage.

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