Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-07-11
1999-09-14
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
25049223, 250396ML, H01L 21027, H01J 37153
Patent
active
059526670
ABSTRACT:
Charged-particle-beam microlithography apparatus are disclosed comprising a lens system, such as a variable axis lens (VAL) or variable axis immersion lens (VAIL), that causes a charged-particle-beam incident to an objective lens off-axis to be incident under the same conditions as if the beam were incident on-axis. The objective lens comprises astigmatism-correction deflectors that generate an astigmatism-correction field serving to correct astigmatism of the beam and generate a deflecting magnetic field that corrects the off-axis state in the astigmatism correction field relative to the charged-particle-beam. Thus, generation of aberrations is kept to a minimum even when the charged-particle-beam is incident off-axis.
REFERENCES:
patent: 5389858 (1995-02-01), Langner et al.
patent: 5635719 (1997-06-01), Petric
Berman Jack I.
Nikon Corporation
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